Abstract
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell.
Highlights
The most prominent request for deep sub-electron noise performance arises from imaging, spectroscopy and photon counting in the visible domain
The proposal for repetitive non-destructive readout (RNDR) was already done between the Internal Gates of two closely spaced Depleted field effect transistors (DEPFET) connected by a CCD-like transfer contained in the original publication [3]
For the sake of Moving the signal charge from one device to the other allows one to reproduce the DEPFET output simplicity we studied a case in which we read out only one device
Summary
The most prominent request for deep sub-electron noise performance arises from imaging, spectroscopy and photon counting in the visible domain. At wavelengths in the ultra-violet region of 300 nm, the absorption length in silicon is only 8 nm, i.e., the absorption of the photon happens very close to the radiation entrance window Detectors covering this full bandwidth have to cope with a difference of the absorption depth of the photon in the sensor of a factor of 5000 while the quantum efficiency ideally has to be high and constant. The generated signal electrons are collected and confined in a potential minimum underneath the transistor gate, where the stored signal charges modulate the DEPFET current. To get a truly linear amplifier system for single photon counting, the readout noise of the has to be significantly lower than 1 electron (rms), e.g., 0.2 electrons (rms). 3 will present the mathematical treatment of 1/fofnoise and briefly sensor in systems
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