Abstract
In this presentation we report results obtained by the first combined application of the Metal Oxide Semiconductor and the Photocarrier Grating configurations. This combination enabled the first simultaneous study of the mobility-lifetime products of the two carriers and their light intensity exponents as a function of the position of the Fermi level, in undoped a-Si:H. We found that anticorrelations and correlations prevail between these two sets of quantities. The conclusion we derive from these behaviors is that the “defect pool” model accounts for the phototransport data much better than any other model.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
