Abstract
The effective channel width of quasi-one-dimensional split-gate devices fabricated on a back-gated GaAs/AlGaAs modulation doped heterostructure is investigated as a function of carrier density for different split-gate voltages. For a fixed split-gate voltage, the effective channel width decreases with decreasing carrier densities, which is expected due to increased depletion layer width. The experimental data also indicates that the effective channel width can be modeled to depend approximately on the inverse square root of the carrier density. The results presented are valuable for the design of split-gate as well as new low dimensional device structures.
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