Abstract
A systematic study of the Al Schottky barrier height on clean GaAs(100) and AlAs(100) as a function of initial arsenic surface coverage has been performed. Two new surface phases on AlAs(100) have been observed. Al Schottky barrier height showed a steady decrease with increasing arsenic coverage on GaAs, and showed steady increase with increasing arsenic coverage on AlAs. The results are compared with current models of Schottky barrier formation.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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