Abstract
The problems of the density of states (DOS) in the mobility gap of a-Si:H are briefly reviewed. The new spectral dependences of the coefficient of the optical absorption, found on differently doped a-Si:H samples by constant photocurrent method (CPM) are presented and the deconvolution procedure, by which the DOS is deduced, is carefully analysed. Our recent result that the Si dangling-bond (DB) related peak in DOS of n-type a-Si:H is below the peak in DOS of p-type a-Si:H is reconfirmed. This surprising result is in conflict with the simple Street's model of DOS. The new model of DOS, based on the predominance of the intimate pairs of DBs with the dopant atoms (D− +P4+. for example) and deeper position of the paired DBs, is presented.
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