Abstract
In this paper, we report the observation of the degradation and breakdown of thin silicon dioxide films subjected to both the unipolar and bipolar pulse voltage stresses at nanoscale by using conductive atomic force microscopy. It is found that the unipolar pulse voltage stress produces more severe damage than does the bipolar pulse voltage stress. We also notice that hard breakdown is always preceded by soft breakdown for thin silicon dioxide subjected to either unipolar or bipolar pulse voltage stress, and the soft breakdown is always accompanied with random current fluctuation in the I-t characteristics. The influence of varying frequency of the pulse voltage stresses on the oxide breakdown is also investigated in this work.
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