The degradation mechanism and stability enhancement of GaSe lateral memristors

Abstract

Memristors have attracted considerable attention in the fields of high-density memory and artificial intelligence. However, the performance and stability of memristors may undergo noticeable changes over time, particularly in the case of lateral memristors. In this study, based on two-dimensional (2D) GaSe lateral memristors, we observed that the performance of devices degrades rapidly within a week, accompanied by the appearance of numerous particles identified as AgxSey particles on the surface. Furthermore, we found a correlation between the severity of device degradation and the quantity of AgxSey components, which is related to the current compliance during device testing. After applying a protective layer to the device surface, both the morphology and electrical performance of the device were effectively preserved for more than half a year. Our results highlight the significant impact of conductance filament content in lateral memristors on device degradation. Moreover, we demonstrate the effectiveness of using a protective layer in inhibiting degradation and maintaining the long-term performance of lateral memristors. These findings are of significant importance for enhancing the performance stability of integrated lateral memristors.