Abstract
The effect of interfacial conditions upon the opto-electronic properties of p-Ge/n-ZnSe heterojunctions has been studied by engineering the interface of such junctions into two quite distinct and different forms. The first of these has been produced by the evaporation of zinc selenide on to an ordered and oxygen-stabilised (100) germanium surface. The second has been a consequence of the post-growth annealing of junctions formed from the evaporation of zinc selenide on to clean, restructured (100) germanium surfaces; a treatment that has resulted in the development of an interfacial compound phase. The current-voltage and photoresponse characteristics of the junctions have then been determined and models have been proposed that relate to the various conditions existing within the junctions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
