The dazzling/damage mechanism of InGaAs detectors by near-infrared continuous laser

Abstract

To investigate the dazzling/damage mechanism of InGaAs detectors by continuous laser, InGaAs detectors irradiated by continuous laser were analyzed theoretically and verified experimentally. Constructing the dazzling model of InGaAs detectors, saturated pixel data at different power levels were obtained. After comparing these data with verified experiments, it was observed that the magnitude and regularity of saturated pixel were relatively consistent at the same power levels. A finite element theoretical model of laser-irradiated InGaAs detectors was designed by Comsol. After calculation, the corresponding laser damage threshold for InGaAs detector was about 9.13 × 105 W/cm2 and 2.63 × 105 W/cm2 for irradiation times of 40 ms and 400 ms, respectively. These values were in relatively good agreement with the experimentally obtained damage thresholds of 1.07 × 106 W/cm2 and 3.95 × 105 W/cm2. The verified experiments confirmed the validity of the simulation methods and the dazzling/damage model employed in this paper. This study serves as a reference for further research on the laser irradiation effects and damage mechanisms of InGaAs detectors, as well as for laser protection and performance optimization in imaging systems.