Abstract
The characteristics of a cylindrical field-effect transistor are derived analytically on the basis of Shockley's theory of the planar field-effect transistor. It is found that the cylindrical device is capable of giving twice the (voltage) amplification factor of that of the planar device. Its frequency behavior should be comparable to that of the Shockley unit. Because of the loss of one degree of freedom, the transconductance and power characteristics of the cylindrical field-effect transistor are sharply limited. Experimental data support the analytical results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
