Abstract
Heusler alloys are ferromagnetic half-metals and candidates for materials with enhanced tunnel magnetoresistance (TMR). In the article [1], Co2MnSi has been used as one electrode in a magnetic tunnel junction. The cover figure shows, together with the unit cell of Co2MnSi, the TMR characteristics at 20 K at 1 mV (red) and 10 mV (blue), respectively. Large spin polarizations of 61% and 66%, respectively, were achieved. The first author, Andreas Hütten, is working in the group of Günter Reiss at the University of Bielefeld. Their research is devoted to magnetism and spin-dependent electronic transport in thin films and nanostructures, the development of optimized magneto- and spin-electronic devices as well as of preparation methods of magnetic nanostructures. This paper is an invited presentation from the Second Seeheim Conference on Magnetism (SCM2004), held in Seeheim, Germany, 27 June–1 July 2004. The full Proceedings of this conference are published in phys. stat. sol. (c) 1, No. 12 (2004).
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