Abstract
Pr0.5Sr0.5MnO3 films were grown on ferroelectric substrates of 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 by pulsed-laser deposition method. The film structure and lattice change with electric field applied on the substrate are examined by X-ray diffraction. The electric field dependence of resistivity was compared with electric field dependence of lattice at room temperature, revealing a relation between resistance and strain. Current-induced electroresistance (CER) was studied by using different measuring current. With increasing electric filed a colossal decrease of CER at low temperature was achieved, indicating great strain effect. The piezoelectric strain effect on the magnetoelectric coupling at multiferroic interface was discussed.
Highlights
The influence of electric-current on physical properties of ferromagnetic materials have been widely studied.[1,2,3,4,5] Besides the Joule heating effect,[6] the current-induced reversible resistance switching and magnetization switching are focused due to its potential applications and significant physics of magnetoelectric coupling.[7,8,9] The current-induced electroresistance (CER) effect, where the resistance is dependent on the electric-current, has been observed in several manganites such as Pr1−xCaxMnO33 and Pr0.5Sr0.5MnO3 (PSMO).[9]
The PSMO films are grown on single crystal substrates of (001)-oriented PMN-PT by pulsedlaser deposition (PLD) method
When the electric field increases to 8 kV/cm, the in-plane lattice of PMN-PT roughly gets compressed by 0.28%, which reduces the tensile strain in PSMO film
Summary
The influence of electric-current on physical properties of ferromagnetic materials have been widely studied.[1,2,3,4,5] Besides the Joule heating effect,[6] the current-induced reversible resistance switching and magnetization switching are focused due to its potential applications and significant physics of magnetoelectric coupling.[7,8,9] The current-induced electroresistance (CER) effect, where the resistance is dependent on the electric-current, has been observed in several manganites such as Pr1−xCaxMnO33 and Pr0.5Sr0.5MnO3 (PSMO).[9]. Other simultaneous magnetoelectric coupling effects caused by ferroelectric field such as charge simulation at the interface may make the properties of FM layer change.[13] these two originals could be distinguished because the strain effect is symmetrically modified by electric field. Utilizing this structure, we may explore the in-situ strain effect on CER. A ferromagnetic metal (FMM) to antiferromagnetic insulator (AFI) transition takes place at temperature of ∼150 K in PSMO bulk By contrast, such a transition can not be observed in the (001)-oriented PSMO/LaAlO3. In this paper, using FM/FE epitaxial heterostructure of PSMO/PMN-PT the influence of in-situ strain effect on CER are studied
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