Abstract
Abstract The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of silicon p–i–n diodes have been investigated both prior to and after radiation-induced damage by 1 MeV neutrons. The results have been analysed and several rates of damage evaluated. The indication is mainly that radiation damage occurs only up to certain fluencies. Beyond these, the material becomes resistant to further damage. Thus, initial heavy radiation damage can be used to achieve radiation-hardness of detector diodes. This result is contrary to previous suggestions that continued irradiation renders the detectors inoperable but is in good agreement with our results on radiation-hardness induced by gold-doping.
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