Abstract

The path of crystal growth from the precursor to SrBi 2Ta 2O 9 (SBT) crystal was investigated in order to obtain a better method of fabricating SBT films. A phase diagram of the Sr–Bi–Ta–O system with a constituent element ratio similar to that of SBT was determined. Thin film samples were prepared by the metal–organic decomposition method. In the case of a Bi-rich nominal composition (compared with SBT crystal), a fluorite-like structure appeared at the early stage of the crystal growth, after which the SBT phase was finally stabilized. The lower limit of annealing temperature for synthesis of SBT thin films with thicknesses less than 100 nm was about 650°C.

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