Abstract
Using the conventional melt-spinning technique we have been able to double the range over which Mg-Zn has hitherto been made amorphous. The crystallization characteristics of the alloys have been investigated through differential scanning calorimetry (DSC), X-ray photography and measurement of electrical resistance and magnetic susceptibility. The crystallization of amorphous Mg-Zn is initiated at lower temperatures by the precipitation of fine-grained, distorted Mg51Zn20 crystals which grow into regular Mg51Zn20 crystals at the end of the crystallization process. Mg is also precipitated for the Mg-rich alloys. The mechanism for further recrystallization at higher temperatures depends on whether the alloy is Mg-rich or Zn-rich with respect to Mg51Zn20. Both recrystallization steps are shown to be in qualitative agreement with the equilibrium phase diagram. For all compositions, upon crystallization, the electrical resistivity decreases while the valence magnetic susceptibility increases, as expected for a simple s-p system. The value of the magnetic susceptibility for the composition Mg70Zn30 is in excellent agreement with the prediction of the free electron model. The deviations from the free electron model for the other compositions may be due to the simple subtraction of the large core diamagnetism (filled d-band) of Zn.
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