Abstract
The stoichiometric Ga4Sb6Te3 and Ga–Sb materials were systemically studied. The alloy Ga4Sb6Te3 shows a fast crystallization speed, very high crystallization temperature, Tx, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher Tx than Ge2Sb2Te5 indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, Tx and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga4Sb6Te3 with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.
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