Abstract
Transparent conductive Co-doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of cobalt (Co)-doped ZnO (between 0 and 3wt%) thin films were grown on glass substrate at 350°C. The thin films were annealed at 500°C for improvement of the physical properties. Nanocrystalline films with hexagonal wurtzite structure and a strong (002) preferred orientation were obtained. The maximum value of grain size G=63.99nm is attained with undoped ZnO film. The optical transmissions spectra showed that both the undoped and doped ZnO films have transparency within the visible wavelength region. The band gap energy decreased after doping from 3.367 to 3.319eV when Co concentration increased from 0 to 2wt% with slight increase of electrical conductivity of the films from 7.71 to 8.33(Ωcm)−1. The best estimated structure, optical and electrical results are achieved in Co-doped ZnO film with 2wt%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Optik - International Journal for Light and Electron Optics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
