Abstract
The critical thickness for the relaxation of InGaN layers grown on (0 0 0 1)GaN on sapphire for an indium content between 10% and 20% has been determined experimentally. The layers were grown by metal-organic vapour phase epitaxy (MOVPE). The indium content was varied by changing growth temperature between 700 and 750 °C. In-situ ellipsometry could identify a growth mode transition during layer growth, from relatively smooth InGaN layer to a rougher layer with higher indium content. X-ray diffraction found a completely strained layer with lower indium content and a completely relaxed layer with higher indium content. These findings were consistent with absorption and photoluminescence measurements.
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