The creation of a method of growing large crystals of optical synthetic sapphire at the S I Vavilov State Optical Institute

Abstract

This article describes the history of the creation at the S. I. Vavilov State Optical Institute (GOI) of a progressive and internationally recognized method of growing large crystals of optical synthetic sapphire (the GOI method), which is being used to grow almost half of the world's production of large crystals (as much as 300mm in diameter). The main features of the GOI method are discussed--a crystal with an extremely sharp crystallization front is grown from a seed in the direction of the walls of the growth crucible without rotating it. The perfection of a technology for growing synthetic sapphire that makes it possible to grow crystals up to 520mm in diameter and weighing up to 450kg is discussed. The current technology makes it possible to reduce the size of the growth furnaces and the electrical-energy consumption by a factor of 8.