Abstract

The effects of the composition, size, and thermal expansion coefficient of self-induced Ge and SiGe nanoislands formed on Si on the value of the islands’ total energy are examined. A correlation between the discrete minima in the surface energy of the islands and their shape is considered. The interdiffusion processes that are important at high temperatures of epitaxy are taken into account. The results of calculations are compared with experimental data obtained using atomic-force microscopy.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call