Abstract
Doping is widely used in semiconductor devices as an effective means to improve TMD properties. At present, the doping of monolayer TMD has made a lot of progress. However, monolayer TMD has low carrier mobility which hinders the improvement of device performance. Compared with monolayer TMD, bilayer TMD has higher carrier mobility and state density. However, there are few researches on synthesis of doped bilayer TMD. Here, V-doped bilayer WS2 films were grown by liquid precursor assisted chemical vapour deposition (LACVD). STEM characterization confirmed the effective doping of V atom in bilayer WS2. The doping of bilayer TMD structure is helpful to improve the practical application of bilayer TMD in the field of optoelectronic devices.
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