Abstract
The modulation of magnetic anisotropy is very promising for the realization of energy-efficient memory devices. In this work, we investigate the effects of interfacial oxidation and electric field on the magnetic anisotropy of the Fe4N/MgO heterostructure using first-principles calculations. The Fe4N/MgO heterostructure exhibits in-plane magnetic anisotropy, while interfacial oxidation induces a perpendicular magnetic anisotropy. In addition, the electric field-controlled switching of magnetic anisotropy is achieved. The magnetic anisotropy of FeI and FeII atoms in Fe4N has distinct response characteristics to interfacial oxidation and electric field, where the FeII atom is more sensitive and its magnetic anisotropy is reversed from the in-plane to the out-of-plane direction. This suggests the tunability of magnetic anisotropy in the Fe4N/MgO heterostructure, which offers the possibility for further application of the Fe4N-based magnetic tunnel junction.
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