Abstract
AbstractThe Schottky barrier characteristics of Al on a Bridgman grown p‐GaSe layered semiconductor have been investigated using current‐voltage‐temperature (I‐V‐T) characteristics over a temperature range of 198 K∼373 K. The forward I‐V‐T data reveals a decrease at the barrier height, but an increase at the ideality factor with decreasing in measurement temperature. For the 300 °C‐annealed diode, the barrier height decreased from 1.04 eV to 0.6 eV and the ideality increased from 1.4 to 2.4, as the temperature decreased from 373 K to 198 K. The Richardson plot showed activation energy of 0.26 eV at high temperature region, while showed a lower energy of 0.07eV at low temperature region. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
