Abstract
The Si2Sb2Te5 (SST) storagearray with a density of 2.4 Gbit inch−2 was fabricated by UV nanoimprint lithography (UV-NIL) and filling semiconductortechnology. The area of the SST storage cell contacted with electrodes was0.031 µm2. Structural transformation of SST during heating was in situ studied by time-resolved x-raydiffraction (XRD). An electrical probe storage system was constructed by SST combiningwith a conductive atomic force microscope (C-AFM) with a nanoprobe. Switching of theSST electrical probe storage cell from the high resistance state to the low resistancestate had been achieved, and the rate of these two resistance states was 37.71.The current increased apparently when the applied voltage exceeded 1.79 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
