Abstract
The impact of pulse repetition rate and film thickness on the magnetic, magnetoresistance (MR) and anisotropic magnetoresistance (AMR) has been investigated for La0.4Pr0.3Ca0.3MnO3 thin films grown on LaAlO3 (LAO) substrates by pulsed laser deposition technique. Change in repetition rate led to a difference in growth modes and altered the magnetic and electrical properties (MR and AMR) of thin films. The XRD results show that in the films with the thickness of 100 nm, by increasing the pulse repetition rate from 2 to 7 Hz the strain level doesn’t change, while strain significantly increased at the repetition rate of 10Hz. Analysis of transport and magnetization measurements show that at 2 and 5 Hz deposited films, the ferromagnetic metallic behavior is dominant, while in the film deposited at 10 Hz the antiferromagnetic (AFM) insulating phase increased. Moreover, with increasing strain in the thinner films (40 nm), deposited at 2 Hz, AFM phase is strengthened. Exchange bias confirms the existence of a dead layer in 100 nm film deposited at 10 Hz and 40 nm film deposited at 2 Hz. In addition, high strain in thinner films led to an enhanced Jahn-Teller coupling, so the angular momentum and spin-orbital/lattice interactions are significantly increased, which led to a lower magnetoresistance in thinner films. These results suggest that the pulse repetition rate provides an additional degree of freedom to tune magnetic and electrical properties of manganite thin films prepared by pulsed laser deposition technique.
Highlights
The anisotropic magnetoresistance (AMR) effect in thin films has attracted a lot of attention, because it has been utilized in magnetic devices such as magnetic read heads and sensors and nonvolatile storage devices such as magnetic random access memories.[1,2,3]
In the Pulsed Laser Deposition (PLD) technique, it is expected that factors such as oxygen pressure, energy and repetition rate of laser can affect the growth process and change different characteristics of the films
We have investigated the effect of laser pulse repetition rate (LPRR) and thickness on MR and AMR in epitaxial
Summary
The anisotropic magnetoresistance (AMR) effect in thin films has attracted a lot of attention, because it has been utilized in magnetic devices such as magnetic read heads and sensors and nonvolatile storage devices such as magnetic random access memories.[1,2,3] Extensive research has been conducted in order to understand the AMR phenomenon in manganites. In the Pulsed Laser Deposition (PLD) technique, it is expected that factors such as oxygen pressure, energy and repetition rate of laser can affect the growth process and change different characteristics of the films. These parameters are very important in the growth process and can change the amount of “dead layer” and strain disorder in the thin films. It can be concluded that the properties are correlated with the growth modes and the change in the growth process can play an important role in the magnetic and magnetotransport properties For this purpose, one of the parameters to change the growth conditions in PLD method could be the laser pulse repetition rate (LPRR) variation. Conditions, we grow the films with different thicknesses and consider the effect of the strain on the MR and AMR phenomena
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