Abstract
Dark conductivity of silicon wafers has been measured as a function of doping levels, sample’s geometry, and under gamma irradiation conditions. It has been shown that measurements of samples conductivity under different operating conditions can be used as an efficient method for material quality evaluation. In addition, gamma irradiation gives future information on Si-wafer quality, where it can effectively influence the material properties. The induced change in conductivity is discussed following the mathematical difference of conductivity modulation mode. Using this model conductivity measurements could be considered as a good and simple technique for determining the silicon quality and for further development in silicon processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
