Abstract
The electrical characteristics of PELPCVD SIPOS-silicon heterojunctions are presented. The d.c. current-voltage characteristics as a function of temperature for SIPOS-silicon heterojunctions, for SIPOS having silicon contents of from 31 to 79 atomic percent and film thickness of from 1400 to 6800 Å are reported. At high temperatures, carrier transport occurs by thermal excitation over a mobility edge, giving an activation energy of half the bandgap. At lower temperatures, the tunneling mechanism of Variable Range Hopping (VRH) dominates the conduction process. The current density-voltage characteristics of all the samples over the entire measured temperature range are accurately predicted by the use of a variation of Mott's model for conduction in a non-crystalline medium.
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