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Abstract
We present the first successful optically detected magnetic resonance experiments (ODMR) on strained and unstrained Ga x In 1− x As/InP type-I quantum wells. The resonances attributed to electrons are in general anisotropic and detailed results are given for the composition range 0.4 < x < 0.6. Extrapolating to the binary end points, i.e. InAs and GaAs close agreement with existing results is found. The anisotropy is explained within a simple model using subband calculations. It also explains why single-sided p-type modulation doping reduces the electron-hole wavefunction overlap, increases the radiative life-times and allows for optical detection of magnetic resonance. A detailed discussion why hole resonances can be ruled out is given.
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