Abstract
The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semiconductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. Within this theory the influence of ultrasound on the conditions of formation of spherical nanoclusters and their radius is investigated. The nanocluster size depending on average concentration of defects and amplitude of an acoustic wave is determined. It is established that ultrasonic treatment of the semiconductor in the process of formation of an ensemble of nanoclusters leads to reduction of dispersion of their sizes. In the framework of this model, a possibility of the ultrasound-stimulated the size dispersion reduction of strained InAs/GaAs quantum dots doped with an isovalent impurity are analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
