Abstract
The high field model had to be modified for the anodic growth of amorphous oxide films (Al, Nb, and Ta). Mobile ions are only formed at the interfaces and migrate through the film. Simulations based on this assumption show a very similar shape of current-potential curves compared to the experimental results. The simulations use only one free parameter, the charge density p. All other parameters, such as i0 and β, were taken from the experiments.
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