The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Abstract

The electron relaxation mechanism of the electrons in the pseudo triangle quantum well located in the Al0.3Ga0.7N/GaN heterostructure interface grown by the Molecular Beam Epitaxy (MBE) is studied by Shubnikov de-Haas (SdH) oscillations. Four different sample types were used in the experiments; the carrier density in the quantum well is the same for all samples, whereas the top layer structures are different. The effects of a spacer layer placed between the barrier layer and the quantum well layer, a doped barrier layer placed behind the undoped barrier layer, and a passivation layer placed as a top layer on the energy relaxation processes of the carriers in the quantum well were investigated. The SdH oscillation measurements were carried out under a magnetic field of up to 11 T at a temperature range of 1.8–20 K. The electron temperatures and energy relaxation mechanisms are obtained by comparing the change in the relative amplitude of SdH oscillations in different applied electric fields and lattice temperatures. It is deduced that the samples with a passivation layer and doped barrier layer have higher electron temperatures at lower applied electric fields. The hot electrons relax with acoustic phonon scattering for these samples, including deformation and piezoelectric interactions in the low-temperature region determined theoretically. However, the hot electrons relax with acoustic phonon scattering for samples with spacer layer and spacer/passivation layers in the high-temperature region determined theoretically. Furthermore, it was observed that the spacer and passivation layers lead to faster relaxation of hot electrons.