The competition between aluminum and group IV (Si, C) atoms on the rhenium surface

Abstract

Electropositive atoms of aluminum adsorbed on a (\({{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma \))Re surface exhibit competition with non-metals (Si, C) for the adsorption sites at high temperatures (1200–1500 K). In this system, silicon displaces aluminum, while aluminum displaces carbon. The mechanism of this competition is fully analogous to that observed previously for Si, C, and S atoms on the surface of refractory metals, despite the fact that aluminum atoms (in contrast to the nonmetals) in the adsorbed state possess a positive charge.