The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

Abstract

The reaction process model during initial nitridation of Si (111) using atmospheric pressure plasma source was constructed and it was compared to that using a radio frequency plasma source. In atmospheric pressure plasma, emission lines from the N2 second positive system were dominantly observed. By exposing the atmospheric pressure plasma to Si substrate at the temperature ranging from 25to500°C, silicon nitride films with a thickness below 1.8nm were formed. In order to study the nitridation process, the changes in the film thickness against the substrate temperature and nitridation time were systematically studied at a pressure ranging from 50to700Torr. The film thickness increases with increasing the nitridation pressure below 400Torr and it saturates above 500Torr. It was completely regardless of the substrate temperature. From the time dependence of the film thickness at various nitridation pressures, it was revealed that these experimental results were well fitted to a Langmuir-type adsorption model. In the case of nitridation using atmospheric pressure (AP) plasma, molecular species play an important role for nitridation without thermal diffusion. The difference of silicon nitride films fabricated using AP plasma and rf plasma originates from the difference in the active species.