The comparison of electric field intensity effects to the bean sprouts growing

Abstract

The electric field intensity is varied at 10, 20, 25 kV/m. This paper is focused on the height of stems and the length of roots. The effect of electric field intensity is evaluated on bean sprout growing. The electric field intensity is analyzed by the finite element method. Experimental results indicate that the bean sprout in high electric field intensity has a better growth in comparison with that of low electric field based on statistical analysis.