Abstract
The electronic properties of the space charge layer of the tin dioxide thin films, prepared by the laser-induced chemical vapour deposition (L-CVD), have been studied using X-ray photoelectron spectroscopy (XPS) and photoemission yield spectroscopy (PYS). Based on the analysis of Sn3d 5/2 XPS peak, the influence of exposition to molecular oxygen O 2 and hydrogen H 2 on the stoichiometry of the L-CVD deposited SnO 2 thin films, as well as the interface Fermi level position in the band gap, have been determined and compared to the variation of the work function determined from the threshold of the ex situ recorded photoemission yield spectra. The observed changes of the interface Fermi level position and the work function upon adsorption/desorption of O 2 and H 2 were attributed to decrease/increase of the concentration of oxygen vacancies in the near surface region.
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