Abstract
We have systematically investigated the use of high-temperature sputtering in conjunction with excimer laser planarization for planarizing Al alloy surfaces and filling submicrometer, high aspect ratio (∼1–3) contact vias. In general, the process window for the complete contact filling increased significantly with the increasing sputtering temperature, and decreased with shrinking contact/via geometry. Better as-deposited metal step coverage and profile obtained at higher sputtering temperatures were identified as the key parameters contributing to this significant improvement in the process window. The process window achieved by this combined process is significantly wider than that obtained by high-temperature sputtering alone. In addition, the poor surface morphology generally observed for the Al alloy films sputtered at elevated temperatures is significantly improved due to recrystallization during laser reflow.
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