Abstract
The effects of different polishing pads and slurry solid contents on the SiGe chemical mechanical polish (CMP) process were investigated. By optimizing the polishing conditions, a smooth strained-Si surface on a flattened buffer layer of can be achieved. The novel cleaning solutions with various surfactants and chelating agents for post-CMP SiGe were studied. There was about 10% current enhancement of the optimal cleaning conditions, showing high performance in particle removal, metallic cleaning, and electrical characteristics.
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