Abstract
The design and operation of the CLEO III silicon vertex detector is described in this report. This detector consists of four layers of double-sided silicon wafers covering 93% of the solid angle. After initially meeting its signal-to-noise and spatial resolution design goals, the r − φ side efficiency of layers 1 and 2 decreased dramatically due to radiation-induced sensor effects.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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