Abstract
A variety of silylplatinum complexes cis- and trans-PtR(SiYPh 2)L 2 (R=Me, Et, Pr, Bu, vinyl, phenyl, phenylethynyl; Y=Ph, Me, H, F, OMe; L=PMePh 2, PMe 2Ph), cis-Pt(SiR 3)(SnMe 3)(PMe 2Ph) 2 (SiR 3=SiMe 3, SiMe 2Ph, SiMePh 2, SiPh 3), and cis-Pt(SiR 3) 2(PMe 2Ph) 2 (SiR 3=SiMe 2Ph, SiMePh 2, SiPh 3) have been prepared, and their structures and reactivities toward CSi bond formation and phenylacetylene insertion have been examined by X-ray diffraction analysis, NMR spectroscopy, and kinetic experiments. Three types of processes are operative for CSi bond formation from cis-PtR(SiYPh 2)L 2 complexes giving RSiYPh 2. One is the direct CSi reductive elimination; most of the complexes follow this process. The second type involves isomerization of cis-PtR(SiYPh 2)L 2 to cis-PtY(SiRPh 2)L 2, followed by YSi reductive elimination; this process has been observed for cis-PtR(SiPh 3)L 2 (R=Et, Pr, Bu) and cis-PtR(SiHPh 2)L 2 (R=Me, Et, Pr, Bu). Reactions of alkyl–silyl complexes with hydrosilanes also afford the corresponding alkylsilanes quantitatively, constituting the third type of process. Insertion of phenylacetylene into the PtSi bond of PtR(SiPh 3)L 2 complexes takes place only for the cis isomers. Silyl–stannyl complexes undergo competitive insertion of phenylacetylene into the PtSi and PtSn bonds under kinetic conditions, whereas the insertion into the PtSi bond predominates under thermodynamic conditions. Reactivities of four PtSiR 3 bonds toward insertion relative to the PtSnMe 3 bond have been evaluated: SiMe 3 (>49)>SiMe 2Ph (1.9)>SiMePh 2 (0.69)>SiPh 3 (0.075). Bis-silyl complexes exhibit a rather intricate dependence of the insertion reactivity upon the sorts of silyl ligands, not simply correlated with the reactivity of PtSiR 3 bonds, owing to the insertion process involving prior dissociation of a phosphine ligand. The bis-silyl complexes have a twisted square planar structure significantly distorted from planarity, and the rate of phosphine dissociation is highly sensitive to this distortion.
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