Abstract
ZnO layers were deposited on 6H-SiC single crystalline wafers by radio frequency magnetron sputtering. The chemical structure of the ZnO/SiC interface was studied by x-ray photoelectron and x-ray excited Auger electron spectroscopy. A complex chemical structure, involving not only silicon–carbon and zinc–oxygen bonds but also silicon–oxygen and zinc–silicon–oxygen bonds was revealed to form at the ZnO/SiC interface. Based on the comparison with the presumably inert (i.e. chemically abrupt) ZnO/Mo interface, it was concluded that a willemite-like zinc silicate (i.e. Zn2SiO4) interface species develops between ZnO and SiC. The presence of this species at the ZnO/SiC interface will affect the electronic structure of the heterojunction and thus needs to be considered for device optimization.
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