Abstract
The performance of thermoelectric devices is sensitive to the chemical composition, the dopant concentration and the uniformity of the semiconductor materials used in their fabrication. Analytical methods for the determination of silicon, germanium, boron, and phosphorus in SiGe thermoelectric materials are described. These methods were developed because of the fragmentary data available in the literature regarding their chemical characterization. The methods are rapid, accurate, and, with the exception of boron, require a minimum of expensive apparatus. Germanium was determined acidimetrically by means of the mannitol complex after ion-exchange separation on Amberlite XE-243, silica by the conventional gravimetric method, phosphorus colorimetrically as the vanadomolybdophosphate, and boron by emission spectroscopy.
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