Abstract
We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
