Abstract
Theoretical studies of the charge exchange collision between a low energy ion (i.e., about 1 keV) and a solid surface have been performed for the analysis of ion neutralization spectroscopy (INS) using the discrete variational X α method in the energy region 0.5–2 keV. This method provides fairly good molecular basis functions for the system of He + incident on the silicon surface. The charge transfer cross sections are calculated by means of the close coupling approximation, with the wave functions and their energies obtained. The results based on two different models, namely diatomic and cluster calculations, are compared and discussed.
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