Abstract
A new concept in MOS dynamic RAM cells is described and demonstrated. The charge-coupled RAM (CC RAM) cell combines the storage capacity and transfer gate of the one-transistor cell into a single gate. The resulting cell is simpler than the conventional one-transistor cell and possesses significant advantages in packing density and potentially higher yield. One of the variations of the CC RAM cell concept results in a cell whose operation is identical (voltage and timing) to that of the present one-transistor cell. In addition, the CC RAM cell fabrication is essentially the same as the present one-transistor cell process. The CC RAM is an attractive candidate for the next generation RAM's.
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