Abstract
Compressively strained InSb structures aimed for p-channel heterostructure field effect transistors (HFETs) are analysed in order to maximise their hole mobility. We optimise the heterostructure by the change of the material composition, thickness of the layers and position of δ-doping. The splitting of light and heavy hole bands in compressively strained channels are calculated by nextnano3 software as a function of material mole fraction and quantum well thickness. The 8 × 8 k.p method is used for the determination of corresponding hole eigenvalues. The strained layer bandstructure calculation is carried out with Quantumwise ATK for the Kohn-Sham DFT using double-zeta polarised basis set orbitals as well.
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