The characterization of low-k thin films and their fracture analysis in a WLCSP device

Abstract

The IC industry implements low dielectric constant (low-k) materials in copper/low-k interconnects to reduce the RC delay and crosstalk noises. As low-k dielectrics are weaker than traditional SiO2, measuring their mechanical properties is important for numerical simulations to evaluate the structural integrity of a package with low-k materials. In this study, we fabricated freestanding samples of low-k thin film with/without pre-cracks on both sides using lithography and exfoliation for uniaxial tension and coefficient of thermal expansion tests. The tension tests revealed that the average fracture toughness and Young's modulus of the low-k film are 1.41 MPa·m1/2 and ∼2.5 GPa, respectively. Using the measured mechanical properties, we performed a fracture analysis by a 2D finite element model for the low-k material in a wafer-level chip-size package under thermal loading. The computational results showed that the critical microcrack in the low-k layer occurs near the solder balls, where the KI increases rapidly with crack length and exceeds KIC. The results are consistent with the experimental findings in literature. The present methods can help evaluate the integrity of low-k material in a package and improve reliability.