Abstract
Carbon nitride (CN x ) alloy thin films were deposited by pulsed laser deposition (PLD) with varying nitrogen gas pressure (NP) from 0.1 to 800 mTorr at 20°C of substrate temperature (ST) and with varying ST from 20 to 500°C at 0.8 Torr of NP. The effects of the NP and ST on the composition, structural and electrical properties of the nitrogen (N) incorporated camphoric carbon (CC) films have been investigated by standard measurement techniques. We found that, the amorphous structure of CN x films can be changed by NP and ST, and the CN x films with high N content have relatively high electrical resistivity.
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