The characteristics of tunnel oxides grown on textured silicon surface with a simple and reliable process

Abstract

In this work, a simple and reliable method to fabricate a textured Si surface and the characteristics of oxides grown on the textured Si surface are proposed. The concept of different oxidation rates in poly-Si grain and grain boundaries has been used to form textured Si surface which does not need to etch the surface of Si wafer and is without the constraint of stopping the oxidation process on the poly Si/Si-substrate interface to get better electrical characteristics. Tunnel oxide grown on the textured single crystalline Si exhibits much better electrical characteristics and reliabilities than those of oxides grown on poly-Si substrate (thin poly-Si film on Si substrate) and on untextured single crystalline Si substrate.