Abstract

Previously, we proposed a physical model for hydrogen diffusion and accumulation around the crack tip and performed accurate numerical analysis which takes account of the effects of both hydrogen diffusion and accumulation due to the stress gradient. Based on this analysis, the characteristics of hydrogen accumulation around the crack tip were clarified. Since the characteristics of stress corrosion cracking and corrosion fatigue are dominated by chemical anodic reaction, hydrogen embrittlement and dislocation mechanism, to perform the analysis on the competitive phenomenon by these mechanism and to relate the sensitivity of hydrogen embrittlement to the characteristics of corrosion fatigue, it is necessary to construct a exact physical law on the characteristics of hydrogen diffusion and concentration and to formulate the characteristics as a simple function such as diffusion constant, D, yield stress σ ys, and stress intensity factor, K. The effect of stress field such as plane strain and plane stress on the hydrogen embrittlement is necessary to be clarified as the effect of specimen thickness on the hydrogen embrittlement. In this paper, based on this view point, the effect of D, σ ys, and K on hydrogen embrittlement were investigated and formulated. A quantitative parameter which characterize hydrogen embrittlement was proposed for both cases of plane strain and plane stress conditions as the effect of specimen thickness on the hydrogen embrittlement.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.