Abstract
The effects of added indium on the growth characteristics of GaP were systematically studied using conventional liquid phase epitaxy technique with Ga-rich GaP source melt. The GaP growth rate uniformly increase with the source melt of increasing indium addition against gallium solvent. These epilayers have mirror-like surface morphology examined by optical microscope except several grown films with large amount of indium addition meet a terrible interface. The surface morphologies examined by AFM showed the ripples in samples of R 0.05 and R 0.4 and distinct islands with elliptical base shape in the sample of R 0.7 (R-In ratio). The epitaxial layer with incorporation of indium addition during growth had good performance on the carrier concentrations and resistivity. The composition of compound semiconductor become to InGaP at higher amount of In addition to Ga was examined by double-crystal X-ray diffraction and the distribution of indium examined by SIMS also provided the evidences in sample of R 0.7 .
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